Image shown is a representation only.
| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | TIM5964-6UL |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Highest Frequency Band: C BAND; No. of Elements: 1; |
| Datasheet | TIM5964-6UL Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 5 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Minimum DS Breakdown Voltage: | 15 V |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-CDFM-F2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | C BAND |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | 5 A |
| Case Connection: | SOURCE |
| Maximum Power Dissipation Ambient: | 32.5 W |
