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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | TJ50S06M3L(T6L1,NQ |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | TJ50S06M3L(T6L1,NQ Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 120 mJ |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 50 A |
| Maximum Pulsed Drain Current (IDM): | 100 A |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Minimum DS Breakdown Voltage: | 60 V |
| Maximum Power Dissipation (Abs): | 90 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Reference Standard: | AEC-Q101 |
| Maximum Drain Current (Abs) (ID): | 50 A |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0174 ohm |
