TJ50S06M3L(T6L1,NQ by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TJ50S06M3L(T6L1,NQ
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	TJ50S06M3L(T6L1,NQ Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	50 A
Maximum Pulsed Drain Current (IDM):	100 A
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	90 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0174 ohm
Avalanche Energy Rating (EAS):	120 mJ
Other Names:	TJ50S06M3LT6L1NQ 264-TJ50S06M3L(T6L1NQTR TJ50S06M3L(T6L1NQ 264-TJ50S06M3L(T6L1,NQCT 264-TJ50S06M3L(T6L1,NQDKR 264-TJ50S06M3L(T6L1,NQDKR-ND 264-TJ50S06M3L(T6L1,NQCT-ND TJ50S06M3L(T6L1NQ-ND 264-TJ50S06M3L(T6L1NQDKR 264-TJ50S06M3L(T6L1NQCT
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	50 A

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