Toshiba - TJ60S04M3L(T6L1,NQ)

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TJ60S04M3L(T6L1,NQ) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TJ60S04M3L(T6L1,NQ)
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Terminal Position: SINGLE; Terminal Form: GULL WING;
Datasheet TJ60S04M3L(T6L1,NQ) Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 146 mJ
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 60 A
Maximum Pulsed Drain Current (IDM): 120 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 40 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0094 ohm
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