TJ60S06M3L,LXHQ by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TJ60S06M3L,LXHQ
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Drain Current (ID): 60 A; Package Style (Meter): SMALL OUTLINE;
Datasheet	TJ60S06M3L,LXHQ Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	60 A
Maximum Pulsed Drain Current (IDM):	120 A
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	100 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0145 ohm
Avalanche Energy Rating (EAS):	132 mJ
Maximum Feedback Capacitance (Crss):	530 pF
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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