Toshiba - TJ9A10M3,S4Q(M

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TJ9A10M3,S4Q(M by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TJ9A10M3,S4Q(M
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 19 W; Maximum Drain Current (Abs) (ID): 9 A; Operating Mode: ENHANCEMENT MODE;
Datasheet TJ9A10M3,S4Q(M Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 19 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 9 A
Maximum Drain Current (Abs) (ID): 9 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
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