Toshiba - TK065Z65Z,S1F(O

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TK065Z65Z,S1F(O by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK065Z65Z,S1F(O
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Drain Current (ID): 38 A; Operating Mode: ENHANCEMENT MODE;
Datasheet TK065Z65Z,S1F(O Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 38 A
Maximum Pulsed Drain Current (IDM): 152 A
Surface Mount: NO
No. of Terminals: 4
Maximum Power Dissipation (Abs): 270 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .065 ohm
Avalanche Energy Rating (EAS): 569 mJ
Maximum Feedback Capacitance (Crss): 2.5 pF
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 650 V
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