Toshiba - TK16G60W,RVQ

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TK16G60W,RVQ by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK16G60W,RVQ
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; JESD-30 Code: R-PSSO-G2; Package Body Material: PLASTIC/EPOXY;
Datasheet TK16G60W,RVQ Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 194 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 4 pF
Maximum Drain Current (ID): 15.8 A
Maximum Pulsed Drain Current (IDM): 63.2 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 600 V
Maximum Power Dissipation (Abs): 130 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .19 ohm
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