Toshiba - TK62J60W(Q)

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TK62J60W(Q) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK62J60W(Q)
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
Datasheet TK62J60W(Q) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 400 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 61.8 A
Maximum Drain Current (Abs) (ID): 61.8 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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