TK65G10N1,RQ by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TK65G10N1,RQ
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 156 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
Datasheet	TK65G10N1,RQ Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	93 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	42 pF
Maximum Drain Current (ID):	100 A
Maximum Pulsed Drain Current (IDM):	283 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	100 V
Maximum Power Dissipation (Abs):	156 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0045 ohm

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