Toshiba - TK80A04K3L

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TK80A04K3L by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK80A04K3L
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Maximum Drain Current (Abs) (ID): 80 A; Avalanche Energy Rating (EAS): 665 mJ;
Datasheet TK80A04K3L Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 320 A
Sub-Category: FET General Purpose Powers
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 48 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .0035 ohm
Avalanche Energy Rating (EAS): 665 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Maximum Drain Current (Abs) (ID): 80 A
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