Toshiba - TMD0608-4

  1. Home
  2. Toshiba - TMD0608-4
TMD0608-4 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TMD0608-4
Description WIDE BAND HIGH POWER; Construction: MODULE; Maximum Input Power (CW): 18 dBm; Maximum Operating Temperature: 80 Cel; Minimum Operating Frequency: 5650 MHz; Maximum Operating Frequency: 8500 MHz;
Datasheet TMD0608-4 Datasheet
NAME DESCRIPTION
Construction: MODULE
Maximum Input Power (CW): 18 dBm
Minimum Operating Frequency: 5650 MHz
Maximum Operating Temperature: 80 Cel
Maximum Operating Frequency: 8500 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Minimum Operating Temperature: -30 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MAX2839ETN+ by Maxim Integrated

MAX2839ETN+

Maxim Integrated

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
QPA2735TR7X by Qorvo

QPA2735TR7X

Qorvo

Qorvo's QPA2735TR7X is a GAAS RF amplifier with 26dB gain, operating from 13.75-18 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, ideal for wideband low-power applications in RF & microwave systems. The component features surface mounting and a plastic/epoxy package body material.
CMD328K3 by Qorvo

CMD328K3

Qorvo

WIDE BAND LOW POWER;
HMC549MS8GTR by Hittite Microwave

HMC549MS8GTR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC6981LS6 by Hittite Microwave

HMC6981LS6

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 6;
HMC943APM5ETR by Analog Devices

HMC943APM5ETR

Analog Devices

HMC943APM5ETR by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-34 GHz. It can handle up to 20 dBm CW input power and has a max VSWR of 7. Ideal for applications requiring high frequency amplification in RF & microwave systems.
TGA2701-SM by Triquint Semiconductor

TGA2701-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Maximum Input Power (CW): 29 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8500 MHz; Gain: 18 dB; Minimum Operating Frequency: 5900 MHz;
HMC564LC4 by Hittite Microwave

HMC564LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 14 dB;
HMC637ALP5ETR by Analog Devices

HMC637ALP5ETR

Analog Devices

Analog Devices' HMC637ALP5ETR is a wide band medium power RF amplifier with 12 dB gain and 25 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 0 to 6000 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
HMC549MS8GTR by Analog Devices

HMC549MS8GTR

Analog Devices

Analog Devices' HMC549MS8GTR is a GaAs technology RF amplifier with 5V power supply, operating b/w -40°C to 85°C. It features wideband low power performance in a surface mount package, ideal for RF and microwave applications.
HMC-ALH244 by Analog Devices

HMC-ALH244

Analog Devices

The Analog Devices HMC-ALH244 is a wide band low power RF amplifier with 10 dB gain and max input power of 6 dBm. Operating frequency range from 24 GHz to 40 GHz, ideal for RF & microwave applications. With a temperature range of -55°C to 85°C, it's suitable for various component constructions.
TQP3M9019 by Triquint Semiconductor

TQP3M9019

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 4000 MHz; No. of Functions: 1;
MGA-72543-BLKG by Broadcom

MGA-72543-BLKG

Broadcom

Broadcom's MGA-72543-BLKG is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package body, matte tin terminal finish, and operates on a 3V power supply.
HMC564LC4TR by Analog Devices

HMC564LC4TR

Analog Devices

Analog Devices' HMC564LC4TR is a wide band low power RF amplifier with 14 dB gain, operating from 7-14 GHz. It has a max input power of 20 dBm and operates on a 3V supply, drawing up to 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.
BGU7005,115 by NXP Semiconductors

BGU7005,115

NXP Semiconductors

The NXP Semiconductors BGU7005,115 is a RF & Microwave Amplifier with 14 dB gain and 50 ohm impedance. Operating b/w 1559-1610 MHz, it has a max input power of 0 dBm. Ideal for narrow band low power applications, this component is surface mountable and operates in temperatures ranging from -40 to 85 °C.
RA07H4047M-101 by Mitsubishi Electric

RA07H4047M-101

Mitsubishi Electric

Mitsubishi Electric's RA07H4047M-101 is a plastic/epoxy RF amplifier module with 14.77 dBm CW input power, 4 VSWR, and operating frequency range of 400-470 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 90°C with hybrid technology and requires 3.5-12.5V power supplies.
AFD4-020040-20P by L-3 Narda-miteq

AFD4-020040-20P

L-3 Narda-miteq

AFD4-020040-20P by L-3 Narda-miteq is a COAXIAL RF amplifier with 32 dB gain, VSWR of 2, operating from 2-4 GHz. Ideal for wideband medium power applications in RF & microwave systems.
CC2590RGVR by Texas Instruments

CC2590RGVR

Texas Instruments

CC2590RGVR by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and operates on a 3V power supply. Ideal for narrowband low-power applications requiring surface mounting in temperatures ranging from -40 to 85°C.
HMC506LP4ETR by Analog Devices

HMC506LP4ETR

Analog Devices

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
HMC6981LS6 by Analog Devices

HMC6981LS6

Analog Devices

Analog Devices' HMC6981LS6 is a wide band high power RF amplifier with 23 dB gain, operating from 15-20 GHz. It has a max input power of 18 dBm and operates on a 5.5V supply, drawing up to 1100 mA. Ideal for applications requiring high power amplification in the RF & Microwave domain.