Toshiba - TP86R203NL

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TP86R203NL by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TP86R203NL
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Avalanche Energy Rating (EAS): 46 mJ; Transistor Element Material: SILICON;
Datasheet TP86R203NL Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 46 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 19 A
Maximum Pulsed Drain Current (IDM): 109 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Maximum Power Dissipation (Abs): 1.9 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 18 A
Maximum Drain-Source On Resistance: .0062 ohm
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