Toshiba - TPC8038-H

  1. Home
  2. Toshiba - TPC8038-H
TPC8038-H by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TPC8038-H
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G8; Maximum Drain Current (ID): 12 A;
Datasheet TPC8038-H Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 125 pF
Maximum Drain Current (ID): 12 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .0139 ohm
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

LND150N3-GP014 by Supertex

LND150N3-GP014

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; No. of Elements: 1;
BSN20BKR by Nexperia

BSN20BKR

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 3.2 ohm;
SI4532CDY-T1-GE3 by Vishay Intertechnology

SI4532CDY-T1-GE3

Vishay Intertechnology

SI4532CDY-T1-GE3 by Vishay Intertechnology is a Small Signal FET with N/P-channel, 2 elements, and built-in diode. It operates in enhancement mode for switching applications. With max drain current of 6A, 0.047 ohm RDS(on), and 30V breakdown voltage, it's ideal for high-power circuits in small outline packages.
SI2319DS-T1-E3 by Vishay Intertechnology

SI2319DS-T1-E3

Vishay Intertechnology

SI2319DS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage and 2.3A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.082 ohm On Resistance. Suitable for surface mount, it has a max operating temperature of 150°C and features METAL-OXIDE SEMICONDUCTOR technology.
2N7002KW by Fairchild Semiconductor

2N7002KW

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; Moisture Sensitivity Level (MSL): 1;
NDS332P by National Semiconductor

NDS332P

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JEDEC-95 Code: TO-236AB; Transistor Application: SWITCHING;
BSS84-7-F by Diodes Incorporated

BSS84-7-F

Diodes Incorporated

Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.
FDMC8030 by Onsemi

FDMC8030

Onsemi

FDMC8030 by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 50A Max Pulsed Drain Current, and 21mJ Avalanche Energy Rating. With a SQUARE package shape and NO LEAD terminals, it operates in ENHANCEMENT MODE with a max power dissipation of 14W at 150°C.
BSS139H6327XTSA1 by Infineon Technologies

BSS139H6327XTSA1

Infineon Technologies

Infineon's BSS139H6327XTSA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 30 ohm RDS(on), and 3.3pF Crss. Ideal for depletion mode applications, it features a built-in diode and GULL WING terminals in a small outline package.
BS170 by Diodes Incorporated

BS170

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-30 Code: O-PBCY-W3; Transistor Application: SWITCHING;
FDV301N_NL by Fairchild Semiconductor

FDV301N_NL

Fairchild Semiconductor

FDV301N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.22A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY transistor comes in a GULL WING package style suitable for surface mount assembly.
2N7002 by Infineon Technologies

2N7002

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRLML2060TRPBF by Infineon Technologies

IRLML2060TRPBF

Infineon Technologies

Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; Maximum Pulsed Drain Current (IDM): 4.8 A;
BS170 by Infineon Technologies

BS170

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Terminal Form: THROUGH-HOLE; Terminal Finish: TIN LEAD;
IRFL9110TRPBF-BE3 by Vishay Intertechnology

IRFL9110TRPBF-BE3

Vishay Intertechnology

Vishay Intertechnology's IRFL9110TRPBF-BE3 is a P-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 1.2 ohm Drain-Source On Resistance, and 1.1A Drain Current. With a max power dissipation of 3.1W and operating temperature up to 150°C, it is ideal for small outline surface mount designs requiring high efficiency switching capabilities.
BSS138 by Vishay Semiconductors

BSS138

Vishay Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
FDC2512 by Onsemi

FDC2512

Onsemi

The Onsemi FDC2512 is a N-CHANNEL FET with 150V DS breakdown voltage, ideal for switching applications. It features a max drain current of 1.4A and 0.425 ohm drain-source resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 150°C, making it suitable for various electronic devices requiring high power dissipation.
FDN340P-F095 by Fairchild Semiconductor

FDN340P-F095

Fairchild Semiconductor

Fairchild Semiconductor's FDN340P-F095 is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2A, Power Dissipation of 0.5W, and operates in ENHANCEMENT MODE. The transistor has a GULL WING terminal form, RECTANGULAR package shape, and METAL-OXIDE SEMICONDUCTOR technology.
BSS123L by Fairchild Semiconductor

BSS123L

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V; JEDEC-95 Code: TO-236AB;
BSS138PW by NXP Semiconductors

BSS138PW

NXP Semiconductors

NXP Semiconductors' BSS138PW is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features 1.6 ohm RDS(on) and operates in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has GULL WING terminals and is surface mountable.