Toshiba - TPC8124(TE12L,V)

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TPC8124(TE12L,V) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPC8124(TE12L,V)
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 12 A; Package Style (Meter): SMALL OUTLINE;
Datasheet TPC8124(TE12L,V) Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 134 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 540 pF
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 48 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 40 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .01 ohm
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