Toshiba - TPC8202(TE12L)

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TPC8202(TE12L) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPC8202(TE12L)
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (ID): 5 A;
Datasheet TPC8202(TE12L) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 5 A
Maximum Drain Current (Abs) (ID): 5 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
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