Toshiba - TPCP8301

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TPCP8301 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPCP8301
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.48 W; Minimum DS Breakdown Voltage: 20 V; Terminal Position: DUAL;
Datasheet TPCP8301 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.48 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .06 ohm
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 5 A
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