Toshiba - TPH2900ENH,L1Q

  1. Home
  2. Toshiba - TPH2900ENH,L1Q
TPH2900ENH,L1Q by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TPH2900ENH,L1Q
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 78 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 50 pF;
Datasheet TPH2900ENH,L1Q Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 176 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 50 pF
Maximum Drain Current (ID): 33 A
Maximum Pulsed Drain Current (IDM): 102 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 200 V
Maximum Power Dissipation (Abs): 78 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .029 ohm
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRF9530PBF by Vishay Siliconix

IRF9530PBF

Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Transistor Application: SWITCHING; Terminal Position: SINGLE;
FDMC5614P by Onsemi

FDMC5614P

Onsemi

FDMC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 23A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SQUARE PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 6W at 150°C.
FDMS86101DC by Fairchild Semiconductor

FDMS86101DC

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 14.5 A;
IRLR2908TRPBF by International Rectifier

IRLR2908TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 30 A;
TN2510N8-G by Microchip Technology

TN2510N8-G

Microchip Technology

TN2510N8-G by Microchip Technology is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 5A IDM, 1.6W Abs Power Dissipation, and operates in ENHANCEMENT MODE. With METAL-OXIDE SEMICONDUCTOR technology and -55 to 150 °C temperature range, it offers fast ton of 20ns and toff of 30ns for efficient performance.
SI7252DP-T1-GE3 by Vishay Intertechnology

SI7252DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7252DP-T1-GE3 is a N-channel Power FET with 100V DS breakdown voltage, ideal for switching applications. Featuring separate elements with built-in diode, it has 80A max pulsed drain current and 0.017 ohm max drain-source resistance. Its small outline package and matte tin finish make it suitable for surface mount designs.
IRF5305STRLPBF by Infineon Technologies

IRF5305STRLPBF

Infineon Technologies

IRF5305STRLPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, 110A IDM, and 0.06 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. The transistor has a max power dissipation of 110W and operates up to 175°C.
FDS2582 by Onsemi

FDS2582

Onsemi

FDS2582 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage. It features a built-in diode, 4.1A Drain Current, and 0.066 ohm On Resistance. Ideal for SWITCHING applications, this transistor operates in ENHANCEMENT MODE with an EAS of 252mJ and can handle up to 2.5W power dissipation.
NX3008NBKW,115 by NXP Semiconductors

NX3008NBKW,115

NXP Semiconductors

NX3008NBKW,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.35A and power dissipation of 0.31W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C such as power management systems.
NTP8G202NG by Onsemi

NTP8G202NG

Onsemi

NTP8G202NG by Onsemi is a single N-channel Power FET with 9A max drain current and 65W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 150°C ensures reliable performance in demanding environments.
IRF640 by Onsemi

IRF640

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Minimum Operating Temperature: -55 Cel; No. of Elements: 1;
NVTFS5116PLTWG by Onsemi

NVTFS5116PLTWG

Onsemi

NVTFS5116PLTWG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 126A IDM, and 0.072 ohm RDS(ON). It is used in power applications requiring high drain current handling capabilities.
FDB44N25TM by Onsemi

FDB44N25TM

Onsemi

FDB44N25TM by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 44A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 176A Pulsed Drain Current, and 307W Power Dissipation in a RECTANGULAR package.
FDD8424H by Onsemi

FDD8424H

Onsemi

FDD8424H by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations. It has a 40V DS breakdown voltage, 55A max pulsed drain current, and 0.024 ohm max drain-source resistance. Ideal for switching applications, this MOSFET operates in enhancement mode with a max temperature of 150°C.
FQD12N20LTM-F085 by Onsemi

FQD12N20LTM-F085

Onsemi

FQD12N20LTM-F085 by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 9A, Max Pulsed Drain Current of 36A, and Max Power Dissipation of 55W. This ENHANCEMENT MODE transistor operates b/w -55 to 150 °C and has a fast turn on/off time for efficient performance.
VNP35N07-E by STMicroelectronics

VNP35N07-E

STMicroelectronics

VNP35N07-E by STMicroelectronics is a 60V N-CHANNEL FET with 35A ID and 0.035 ohm RDS(on). It operates in ENHANCEMENT MODE, with max power dissipation of 40W. Ideal for automotive applications due to AEC-Q101 standard compliance.
CPH6354-TL-W by Onsemi

CPH6354-TL-W

Onsemi

Onsemi's CPH6354-TL-W is a P-CHANNEL FET with 60V DS breakdown voltage, 16A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates in SMALL OUTLINE package style.
IRFP4468PBF by Infineon Technologies

IRFP4468PBF

Infineon Technologies

IRFP4468PBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a max IDM of 1120A and EAS of 740mJ, ideal for SWITCHING applications. With 0.0026 ohm RDS(on) and 520W Pdiss, it operates in ENHANCEMENT MODE at up to 175°C.
FDMS86163P by Onsemi

FDMS86163P

Onsemi

FDMS86163P by Onsemi is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 100A and EAS of 486mJ, operating in ENHANCEMENT MODE. With a package style of SMALL OUTLINE and -55 to 150 °C temperature range, it offers high performance in power management systems.
IRFH5004TRPBF by International Rectifier

IRFH5004TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;