TPH4R50ANH by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TPH4R50ANH
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .0045 ohm; Package Body Material: PLASTIC/EPOXY;
Datasheet	TPH4R50ANH Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	274 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	60 A
Maximum Pulsed Drain Current (IDM):	200 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	5
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-F5
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.0045 ohm

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