Toshiba - TPH5900CNH,L1Q

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TPH5900CNH,L1Q by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPH5900CNH,L1Q
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain-Source On Resistance: .059 ohm; Package Body Material: PLASTIC/EPOXY;
Datasheet TPH5900CNH,L1Q Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 36 mJ
Other Names: TPH5900CNHL1QTR
TPH5900CNH,L1Q(M
TPH5900CNHL1QCT
TPH5900CNHL1QDKR
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9 A
Maximum Pulsed Drain Current (IDM): 35 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 150 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .059 ohm
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