TPN1600ANH,L1Q(M by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TPN1600ANH,L1Q(M
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Operating Mode: ENHANCEMENT MODE; Terminal Form: FLAT;
Datasheet	TPN1600ANH,L1Q(M Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	17 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	42 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-F8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.016 ohm
Maximum Feedback Capacitance (Crss):	50 pF
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	100 V
Maximum Drain Current (Abs) (ID):	36 A
Peak Reflow Temperature (C):	260

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