Toshiba - TPN22006NH,LQ(S

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TPN22006NH,LQ(S by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPN22006NH,LQ(S
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Package Shape: SQUARE; Package Style (Meter): SMALL OUTLINE;
Datasheet TPN22006NH,LQ(S Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 21 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 14 pF
Maximum Drain Current (ID): 9 A
Maximum Pulsed Drain Current (IDM): 42 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 60 V
Maximum Power Dissipation (Abs): 18 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .064 ohm
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