Toshiba - TPN2R203NC,L1Q

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TPN2R203NC,L1Q by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPN2R203NC,L1Q
Description Small Signal Field-Effect Transistors;
Datasheet TPN2R203NC,L1Q Datasheet
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2N7002LT3G by Onsemi

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2N7002LT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.
2N7002K by Secos

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 5 pF; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS123 by Siemens

BSS123

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SI4447ADY-T1-GE3 by Vishay Siliconix

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IRLML2402TRPBF-1 by Infineon Technologies

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BSS138PW by Nexperia

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BSH103,215 by Nexperia

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NTR4503NT1G by Onsemi

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NTR4503NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 1.5A max drain current, and 0.11 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode, surface mountable, and has a max operating temperature of 150°C.
NDS351AN by Onsemi

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NDS351AN by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It features a max ID of 1.4A and 0.16 ohm RDS(on), operating in enhancement mode at up to 150°C. The small outline package with gull wing terminals makes it suitable for surface mount designs.
FDN327N by Fairchild Semiconductor

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ZVN2110A by Zetex Plc

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NTS2101PT1G by Onsemi

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NTS2101PT1G by Onsemi is a P-CHANNEL FET with 8V DS breakdown voltage, 3.7A max drain current, and 0.1 ohm max on resistance. Ideal for switching applications in small outline packages, operating at up to 150°C with matte tin terminal finish.
BSS138 by General Semiconductor

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