Toshiba - TTC011B,Q

  1. Home
  2. Toshiba - TTC011B,Q
TTC011B,Q by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TTC011B,Q
Description Power Bipolar Transistors;
Datasheet TTC011B,Q Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

JAN2N3055 by New England Semiconductor

JAN2N3055

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Reference Standard: MIL-19500/407; Transistor Application: SWITCHING;
BCP56-16 by Infineon Technologies

BCP56-16

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
MJD117T4 by Continental Device India

MJD117T4

Continental Device India

PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 2 A;
MJ15016G by Onsemi

MJ15016G

Onsemi

The Onsemi MJ15016G is a PNP BJT transistor with max. collector-emitter voltage of 120V, max. collector current of 15A, and max. power dissipation of 180W. It is commonly used for switching applications due to its single configuration and high transition frequency of 2.2MHz.
JAN2N3055 by Vpt Components

JAN2N3055

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 117 W; Maximum Collector Current (IC): 15 A; Terminal Position: BOTTOM;
BD679A by New Jersey Semiconductor Products

BD679A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 4 A; Maximum Collector-Emitter Voltage: 80 V; Transistor Element Material: SILICON; No. of Elements: 1;
TIP41C by Onsemi

TIP41C

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP125 by Mospec Semiconductor

TIP125

Mospec Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
TIP125 by Crimson Semiconductor

TIP125

Crimson Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 5 A; No. of Terminals: 3;
MJE350 by STMicroelectronics

MJE350

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Qualification: Not Qualified;
D44H8 by Fairchild Semiconductor

D44H8

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 8 A;
TIP127 by Motorola

TIP127

Motorola

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
TIP111 by Bourns

TIP111

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON;
TIP3055 by Mospec Semiconductor

TIP3055

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
TIP120 by Semiconductors

TIP120

Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
BCX5616QTA by Diodes Incorporated

BCX5616QTA

Diodes Incorporated

Diodes Inc.'s BCX5616QTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 100, and IC of 1A. With a max operating temp of 150°C, it's ideal for automotive electronics conforming to AEC-Q101 standards.
TIP142 by Motorola

TIP142

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A;
TIP147 by SPC TECHNOLOGY/ MULTICOMP

TIP147

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 500;
2N3055 by Hi-tron Semiconductor

2N3055

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
NJVMJD44H11T4G-VF01 by Onsemi

NJVMJD44H11T4G-VF01

Onsemi

NJVMJD44H11T4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 40, VCE of 80V, and IC of 8A. Ideal for switching applications, it operates b/w -65 to 150°C. This small outline package with Gull Wing terminals is surface mountable and AEC-Q101 compliant.