YTF820 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	YTF820
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Maximum Drain-Source On Resistance: 3 ohm; Qualification: Not Qualified;
Datasheet	YTF820 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2.5 A
JEDEC-95 Code:	TO-220AB
Maximum Pulsed Drain Current (IDM):	10 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	3
Minimum DS Breakdown Voltage:	500 V
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	3 ohm

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