Tt Electronics Plc - OP644SL

  1. Home
  2. Tt Electronics Plc - OP644SL
OP644SL by Tt Electronics Plc

Image shown is a representation only.

Manufacturer Tt Electronics Plc
Manufacturer's Part Number OP644SL
Description PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 930; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Minimum Operating Temperature: -65 Cel;
Datasheet OP644SL Datasheet
NAME DESCRIPTION
Maximum Dark Current: 100 nA
Optoelectronic Type: PHOTO TRANSISTOR
Peak Wavelength (nm): 930
Maximum Power Dissipation: .05 W
Maximum Operating Temperature: 125 Cel
Sub-Category: Photo Transistors
Minimum Operating Temperature: -65 Cel
Mounting Feature: SURFACE MOUNT
Maximum On State Current: .05 A
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

QTLP610CPD by Onsemi

QTLP610CPD

Onsemi

The Onsemi QTLP610CPD is a single phototransistor with peak wavelength of 860nm. It operates b/w -25 °C to 85°C, with min collector-emitter breakdown voltage of 30V. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2mm.
TPS601A-A by Toshiba

TPS601A-A

Toshiba

PHOTO TRANSISTOR; Configuration: SINGLE; Size: 4.7 mm; Shape: ROUND; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES;
TPS616(F) by Toshiba

TPS616(F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Operating Temperature: -30 Cel; Size: 3.1 mm;
BPX81-3 by Infineon Technologies

BPX81-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 850; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .000006 s; Maximum Dark Current: 200 nA;
SFH320-4-Z by Osram Opto Semiconductors

SFH320-4-Z

Osram Opto Semiconductors

The Osram Opto Semiconductors SFH320-4-Z is a single phototransistor with peak wavelength of 980nm. It has a max operating temperature of 100°C and min operating temperature of -40°C. Ideal for applications requiring infrared detection, it features a nominal light current of 0.65mA and max power dissipation of 0.165W.
SFH313 by Infineon Technologies

SFH313

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000012 s; Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0;
SPS181C by Onsemi

SPS181C

Onsemi

SPS181C by Onsemi is a phototransistor with peak wavelength of 880nm. It operates b/w -20 °C to 75°C, dissipating max power of 0.07W. With max on state current of 0.02A and dark current at 200nA, it's ideal for through hole mounting in various applications.
BPX87 by Infineon Technologies

BPX87

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Response Time: .000008 s; Maximum Operating Temperature: 95 Cel;
BP103B3 by Infineon Technologies

BP103B3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 850;
FLD00030 by Onsemi

FLD00030

Onsemi

The Onsemi FLD00030 is a single phototransistor with peak wavelength of 630nm. It operates b/w -40 °C to 85°C, with collector-emitter breakdown voltage of 6V. Ideal for light sensing applications due to its nominal light current of 1.1mA and low dark current of 100nA.
PT8L by Renesas Electronics

PT8L

Renesas Electronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -40 Cel; Maximum Power Dissipation: .25 W;
SFH314FA-3 by Infineon Technologies

SFH314FA-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 870;
TPS625 by Toshiba

TPS625

Toshiba

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Size: 1.5 mm; Nominal Light Current: 2 mA; Shape: ROUND;
SFH309PF2 by Infineon Technologies

SFH309PF2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000005 s; Maximum Power Dissipation: .165 W; JESD-609 Code: e0;
BPY62-2 by Infineon Technologies

BPY62-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; JESD-609 Code: e0; Minimum Operating Temperature: -55 Cel;
QSD724 by Onsemi

QSD724

Onsemi

The Onsemi QSD724 is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W and response time of 0.00001s. Ideal for IR applications, it has a collector-emitter breakdown voltage of 30V and nominal light current of 3.5mA.
QSE113E3R0 by Onsemi

QSE113E3R0

Onsemi

QSE113E3R0 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 30V. Ideal for optoelectronic applications requiring fast and precise light detection in compact spaces.
SD2440-002 by Honeywell Sensing And Control

SD2440-002

Honeywell Sensing And Control

The Honeywell SD2440-002 is a PHOTO TRANSISTOR with max temp of 125°C and min temp of -55°C. It has a max power dissipation of 0.125W, dark current of 100nA, and response time of 15μs. Ideal for optoelectronic applications requiring through hole mounting features.
SFH313FA-4 by Infineon Technologies

SFH313FA-4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum On State Current: .05 A; Maximum Power Dissipation: .2 W;
SDP8436-002 by Micro Switch

SDP8436-002

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .06 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .00001 s;