Udt Sensors - SC10

  1. Home
  2. Udt Sensors - SC10
SC10 by Udt Sensors

Image shown is a representation only.

Manufacturer Udt Sensors
Manufacturer's Part Number SC10
Description PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Semiconductor Material: Silicon; Maximum Reverse Voltage: 50 V; Maximum Operating Temperature: 55 Cel;
Datasheet SC10 Datasheet
NAME DESCRIPTION
Optoelectronic Type: PIN PHOTODIODE
Maximum Operating Temperature: 55 Cel
Maximum Reverse Voltage: 50 V
Semiconductor Material: Silicon
Sub-Category: Photo Diodes
Minimum Operating Temperature: -10 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TEFD4300 by Vishay Intertechnology

TEFD4300

Vishay Intertechnology

TEFD4300 by Vishay Intertechnology is a 3mm PIN photodiode with peak wavelength of 950nm. It operates b/w -40 to 100°C, has a reverse breakdown voltage of 60V, and nominal light current of 0.027mA. Ideal for applications requiring infrared detection in through-hole mounting configurations.
OP950 by Optotek

OP950

Optotek

OP950 by Optotek is a single configuration PIN photodiode with a size of 1.58 mm. It operates in temperatures ranging from -40 to 100 °C and has a max reverse breakdown voltage of 60 V. This photodiode, which responds from visible to infrared range, is ideal for applications requiring fast response time and low dark current.
BPW41N by Vishay Intertechnology

BPW41N

Vishay Intertechnology

Vishay Intertechnology's BPW41N is a 7.5mm PIN photodiode with peak wavelength of 950nm. It operates b/w -40 to 100°C, has reverse breakdown voltage of 60V, and response time of 0.00000005s. Ideal for IR applications, it features matte tin finish and through hole mount.
OD-8453N by Renesas Electronics

OD-8453N

Renesas Electronics

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: InGaAs; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;
NDL5131P2 by Renesas Electronics

NDL5131P2

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Semiconductor Material: Germanium; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;
TPS708 by Toshiba

TPS708

Toshiba

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .0000001 s;
BPX91B by Infineon Technologies

BPX91B

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Shape: RECTANGULAR; Peak Wavelength (nm): 850; No. of Functions: 1; Semiconductor Material: Silicon;
BPV22NF by Telefunken Microelectronics

BPV22NF

Telefunken Microelectronics

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 30 nA; Maximum Operating Temperature: 100 Cel; Maximum Reverse Voltage: 60 V; Semiconductor Material: GaAs;
SFH203P by Hirschmann Electronics & Kg

SFH203P

Hirschmann Electronics & Kg

PIN PHOTODIODE; No. of Functions: 1; Minimum Reverse Breakdown Voltage: 50 V; Infrared (IR) Range: YES; Maximum Operating Temperature: 80 Cel; Shape: ROUND;
BPX90K by Infineon Technologies

BPX90K

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000013 s; Maximum Reverse Voltage: 32 V; Maximum Dark Current: 200 nA; Minimum Operating Temperature: -40 Cel;
2606B by Lsi

2606B

Lsi

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAs;
MICROFR-10010-MLP-GP by Onsemi

MICROFR-10010-MLP-GP

Onsemi

MICROFR-10010-MLP-GP by Onsemi is a 1mm SQUARE AVALANCHE PHOTODIODE with peak wavelength of 635nm. It operates b/w -40 to 85 °C, has a reverse breakdown voltage of 24.25V, and dark current of 6nA. Ideal for surface mount applications in optoelectronics due to its compact size and high sensitivity.
QSE773E3R0 by Onsemi

QSE773E3R0

Onsemi

QSE773E3R0 by Onsemi is a single PIN photodiode with peak wavelength of 920nm. It operates b/w -40 to 85°C, has a reverse breakdown voltage of 32V, and response time of 0.00000005s. Ideal for IR applications due to its rectangular shape and through hole mounting feature.
PH313 by Renesas Electronics

PH313

Renesas Electronics

Photo Diodes; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;
PH305 by Renesas Electronics

PH305

Renesas Electronics

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 80 Cel; JESD-609 Code: e0; Semiconductor Material: Silicon;
ASDL-5270-D22 by Broadcom

ASDL-5270-D22

Broadcom

Photo Diodes; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
MICROFJ-SMTPA-30035-GEVB by Onsemi

MICROFJ-SMTPA-30035-GEVB

Onsemi

AVALANCHE PHOTODIODE;
NDL5104P1 by Renesas Electronics

NDL5104P1

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Maximum Response Time: .0000000008 s; Minimum Operating Temperature: -30 Cel; Maximum Dark Current: 500 nA;
BPW34B by Infineon Technologies

BPW34B

Infineon Technologies

Infineon's BPW34B is a PIN photodiode with max. operating temp of 80°C and min. temp of -40°C. It has a max. dark current of 2nA, response time of 0.00000035s, and reverse voltage of 32V. Ideal for optoelectronic applications requiring precise light detection in various environments due to its silicon semiconductor material and through-hole mounting feature.
124NLV by Broadcom

124NLV

Broadcom

Photo Diodes;