UJ4SC075006K4S by United Silicon Carbide | Transistors

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Manufacturer	United Silicon Carbide
Manufacturer's Part Number	UJ4SC075006K4S
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Pulsed Drain Current (IDM): 588 A; Maximum Feedback Capacitance (Crss): 4 pF;
Datasheet	UJ4SC075006K4S Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	JUNCTION CASCODE
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	120 A
Maximum Pulsed Drain Current (IDM):	588 A
Surface Mount:	NO
No. of Terminals:	4
Maximum Power Dissipation (Abs):	714 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0074 ohm
Avalanche Energy Rating (EAS):	316 mJ
Maximum Feedback Capacitance (Crss):	4 pF
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	750 V

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