Vishay Intertechnology - 2N6660JTX02

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2N6660JTX02 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number 2N6660JTX02
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6.25 W; JEDEC-95 Code: TO-205AD; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet 2N6660JTX02 Datasheet
In Stock252
NAME DESCRIPTION
Package Body Material: METAL
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .99 A
Sub-Category: FET General Purpose Powers
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 6.25 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 3 ohm
Maximum Feedback Capacitance (Crss): 10 pF
JEDEC-95 Code: TO-205AD
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): .99 A
Peak Reflow Temperature (C): NOT SPECIFIED
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