IRFD014PBF by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	IRFD014PBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.3 W; JESD-30 Code: R-PDIP-T3; Terminal Position: DUAL;
Datasheet	IRFD014PBF Datasheet
In Stock	6,546

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.7 A
Maximum Pulsed Drain Current (IDM):	14 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.3 W
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PDIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.2 ohm
Avalanche Energy Rating (EAS):	130 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	1.7 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
6,546	-	-

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