Vishay Intertechnology - IRFSL11N50APBF

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IRFSL11N50APBF by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number IRFSL11N50APBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; JESD-30 Code: R-PSIP-T3; Package Body Material: PLASTIC/EPOXY;
Datasheet IRFSL11N50APBF Datasheet
In Stock94,316
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 44 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 190 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .55 ohm
Avalanche Energy Rating (EAS): 390 mJ
JEDEC-95 Code: TO-262AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 11 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
94,316 $1.350 $127,326.600

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