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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | JANTX2N6660 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: O-MBCY-W3; |
Datasheet | JANTX2N6660 Datasheet |
In Stock | 1,613 |
NAME | DESCRIPTION |
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Package Body Material: | METAL |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .99 A |
Surface Mount: | NO |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 3 |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-MBCY-W3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | WIRE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | 3 ohm |
Maximum Feedback Capacitance (Crss): | 10 pF |
JEDEC-95 Code: | TO-205AD |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Qualified |
Additional Features: | LOW THRESHOLD |
Reference Standard: | MIL |