PLZ30D-HG3_A/H by Vishay Intertechnology | Diodes

Image shown is a representation only.

Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	PLZ30D-HG3_A/H
Description	ZENER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	PLZ30D-HG3_A/H Datasheet
In Stock	4,416

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	10
Maximum Forward Voltage (VF):	.9 V
Working Test Current:	5 mA
Config:	SINGLE
Diode Type:	ZENER DIODE
Surface Mount:	YES
Maximum Reverse Current:	.2 uA
No. of Terminals:	2
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	ZENER
JESD-30 Code:	R-PDSO-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Polarity:	UNIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Maximum Dynamic Impedance:	55 ohm
Moisture Sensitivity Level (MSL):	1
Reverse Test Voltage:	23 V
JEDEC-95 Code:	DO-219AC
Maximum Voltage Tolerance:	2.5 %
Diode Element Material:	SILICON
Nominal Reference Voltage:	30 V
Maximum Power Dissipation:	.34 W
Reference Standard:	AEC-Q101; IEC-61000-4-2, 4-5
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,416	-	-

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;