Vishay Intertechnology - SI2308DS-T1-GE3

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SI2308DS-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI2308DS-T1-GE3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; No. of Elements: 1; Peak Reflow Temperature (C): 260;
Datasheet SI2308DS-T1-GE3 Datasheet
In Stock1,476
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Power Dissipation (Abs): 1.25 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 2 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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