SI4056DY-T1-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SI4056DY-T1-GE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: Matte Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet	SI4056DY-T1-GE3 Datasheet
In Stock	10,892

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	7.3 A
JEDEC-95 Code:	MS-012AA
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
JESD-609 Code:	e3
No. of Terminals:	8
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	.023 ohm
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
10,892	-	-

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