SI4214DDY-T1-E3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SI4214DDY-T1-E3
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; JEDEC-95 Code: MS-012AA; Maximum Drain-Source On Resistance: .0195 ohm;
Datasheet	SI4214DDY-T1-E3 Datasheet
In Stock	6,610

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	59 ns
Maximum Drain Current (ID):	8.5 A
Maximum Pulsed Drain Current (IDM):	30 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	8
Maximum Power Dissipation (Abs):	3.1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	108 ns
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0195 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	5 mJ
Maximum Feedback Capacitance (Crss):	86 pF
JEDEC-95 Code:	MS-012AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
6,610	$0.920	$6,081.200

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