Vishay Intertechnology - SI4948BEY-T1-GE3

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SI4948BEY-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI4948BEY-T1-GE3
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Terminal Position: DUAL; Maximum Operating Temperature: 175 Cel;
Datasheet SI4948BEY-T1-GE3 Datasheet
In Stock9,097
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2.4 A
JEDEC-95 Code: MS-012AA
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: PURE MATTE TIN
No. of Terminals: 8
Minimum DS Breakdown Voltage: 60 V
Maximum Power Dissipation (Abs): 2.4 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 2.4 A
Maximum Drain-Source On Resistance: .12 ohm
Moisture Sensitivity Level (MSL): 1
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