SI8424CDB-T1-E1 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SI8424CDB-T1-E1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Peak Reflow Temperature (C): 260; Transistor Application: SWITCHING;
Datasheet	SI8424CDB-T1-E1 Datasheet
In Stock	10,634

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	10 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	4
Minimum DS Breakdown Voltage:	8 V
Maximum Power Dissipation (Abs):	2.7 W
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
JESD-30 Code:	S-PBGA-B4
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	BALL
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	10 A
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	.02 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
10,634	-	-

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