Vishay Intertechnology - SIA427ADJ-T1-GE3

SIA427ADJ-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIA427ADJ-T1-GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19 W; Package Shape: SQUARE; Operating Mode: ENHANCEMENT MODE;
Datasheet SIA427ADJ-T1-GE3 Datasheet
In Stock34,282
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 60 ns
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 50 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 3
Maximum Power Dissipation (Abs): 19 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 165 ns
JESD-30 Code: S-PDSO-N3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 3.5 W
Maximum Drain-Source On Resistance: .016 ohm
Maximum Feedback Capacitance (Crss): 690 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 8 V
Maximum Drain Current (Abs) (ID): 12 A
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Pricing (USD)

Qty. Unit Price Ext. Price
34,282 $0.140 $4,799.480

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