Vishay Intertechnology - SIA906EDJ-T1-GE3

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SIA906EDJ-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIA906EDJ-T1-GE3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 7.8 W; Maximum Drain-Source On Resistance: .046 ohm; Minimum DS Breakdown Voltage: 20 V;
Datasheet SIA906EDJ-T1-GE3 Datasheet
In Stock24,488
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.5 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 6
Maximum Power Dissipation (Abs): 7.8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-XDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .046 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 4.5 A
Peak Reflow Temperature (C): 260
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