Vishay Intertechnology - SIA931DJ-T1-GE3

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SIA931DJ-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIA931DJ-T1-GE3
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 7.8 W; Maximum Drain Current (ID): 4.5 A; Package Style (Meter): SMALL OUTLINE;
Datasheet SIA931DJ-T1-GE3 Datasheet
In Stock99,540
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.5 A
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 7.8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .065 ohm
Other Names: SIA931DJ-T1-GE3DKR
SIA931DJ-T1-GE3CT
SIA931DJ-T1-GE3TR
Maximum Feedback Capacitance (Crss): 45 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): NOT SPECIFIED
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