SIB452DK-T1-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SIB452DK-T1-GE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 13 W; Maximum Drain Current (Abs) (ID): 1.5 A; Qualification: Not Qualified;
Datasheet	SIB452DK-T1-GE3 Datasheet
In Stock	17,284

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Pulsed Drain Current (IDM):	1.5 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	13 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N6
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	2.4 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	190 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	1.5 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
17,284	-	-

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;