Vishay Intertechnology - SIDR626EP-T1-RE3

  1. Home
  2. Vishay Intertechnology - SIDR626EP-T1-RE3
SIDR626EP-T1-RE3 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIDR626EP-T1-RE3
Description Power Field-Effect Transistors;
Datasheet SIDR626EP-T1-RE3 Datasheet
In Stock2,970
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,970 - -

Popular Products

Category Top Products

AO3400A by Alpha & Omega Semiconductor

AO3400A

Alpha & Omega Semiconductor

AO3400A by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.7A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With a max power dissipation of 1.4W, it can handle up to 30A IDM in a SMALL OUTLINE package style.
IRFP460LC by Vishay Siliconix

IRFP460LC

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
IRFR3410TRPBF by Infineon Technologies

IRFR3410TRPBF

Infineon Technologies

IRFR3410TRPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has 125A IDM and 140mJ EAS, ideal for SWITCHING applications. With 0.039 ohm RDS(on) and 110W Pd, it operates in ENHANCEMENT MODE at up to 175°C.
IRFB4115PBF by Infineon Technologies

IRFB4115PBF

Infineon Technologies

IRFB4115PBF by Infineon is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 420A and EAS of 830mJ, making it suitable for high-power operations. With an operating temperature up to 175°C and 0.011 ohm RDS(on), this transistor offers reliable performance in various industrial settings.
NDT2955 by Onsemi

NDT2955

Onsemi

NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.
PMV40UN2R by NXP Semiconductors

PMV40UN2R

NXP Semiconductors

PMV40UN2R by NXP Semiconductors is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 16A IDM, and 0.044 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor operates in an ENHANCEMENT MODE with a max temperature of 150 °C.
DMP3056LDM-7 by Diodes Incorporated

DMP3056LDM-7

Diodes Incorporated

DMP3056LDM-7 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 13A IDM, 0.045 ohm RDS(on), and 150°C Max Operating Temp. Its GULL WING terminals and SMALL OUTLINE package make it suitable for surface mount designs.
2N7000 by Telcom Semiconductor

2N7000

Telcom Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: Tin/Lead (Sn/Pb);
IRF7304TRPBF by Infineon Technologies

IRF7304TRPBF

Infineon Technologies

IRF7304TRPBF by Infineon Technologies is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.6A ID. It features a built-in diode, 0.09 ohm RDS(on), and operates in enhancement mode. Ideal for power management applications requiring high drain current capabilities in compact designs.
IRF740APBF by Vishay Intertechnology

IRF740APBF

Vishay Intertechnology

Vishay Intertechnology's IRF740APBF is a N-CHANNEL FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A Max Pulsed Drain Current and 630mJ Avalanche Energy Rating. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 125W, making it suitable for high-power electronic circuits.
BSZ086P03NS3EGATMA1 by Infineon Technologies

BSZ086P03NS3EGATMA1

Infineon Technologies

Infineon BSZ086P03NS3EGATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 160A IDM, and 0.0134 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features METAL-OXIDE SEMICONDUCTOR tech and operates up to 150°C.
IRF540NSTRLPBF by Infineon Technologies

IRF540NSTRLPBF

Infineon Technologies

IRF540NSTRLPBF by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage, suitable for SWITCHING applications. It has a max Drain Current of 33A and Power Dissipation of 130W. The transistor operates in ENHANCEMENT MODE and features a built-in DIODE, making it ideal for high-power switching circuits.
STN1NK80Z by STMicroelectronics

STN1NK80Z

STMicroelectronics

STN1NK80Z by STMicroelectronics is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It features 5A IDM, 16 ohm RDS(on), and 50mJ EAS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
2N7002DW by Diodes Incorporated

2N7002DW

Diodes Incorporated

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Tin/Lead (Sn/Pb); Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
FDD7N25LZTM by Fairchild Semiconductor

FDD7N25LZTM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
ZXMP10A18KTC by Diodes Incorporated

ZXMP10A18KTC

Diodes Incorporated

ZXMP10A18KTC by Diodes Inc. is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 21.1A IDM, 0.15 ohm RDS(on), and operates in ENHANCEMENT MODE at up to 150°C. Suitable for surface mount with GULL WING terminals, it offers high performance in compact SMALL OUTLINE package style.
NDT456P by Onsemi

NDT456P

Onsemi

NDT456P by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 7.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it offers 0.03 ohm On Resistance and can handle up to 20A Pulsed Drain Current.
IRF7842TRPBF by Infineon Technologies

IRF7842TRPBF

Infineon Technologies

Infineon's IRF7842TRPBF is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 140A IDM, 50mJ EAS, and 0.005 ohm RDS(on). Operating from -55 to 150 °C, it has a small outline package with GULL WING terminals for surface mount assembly.
IRFS7530TRL7PP by International Rectifier

IRFS7530TRL7PP

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; No. of Elements: 1; JESD-609 Code: e3;
NDT2955 by Fairchild Semiconductor

NDT2955

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;