SIHB17N80E-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SIHB17N80E-GE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 208 W; Maximum Drain-Source On Resistance: .29 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	SIHB17N80E-GE3 Datasheet
In Stock	47,502

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	92 ns
Maximum Drain Current (ID):	15 A
Maximum Pulsed Drain Current (IDM):	45 A
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	208 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	194 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.29 ohm
Avalanche Energy Rating (EAS):	353 mJ
Maximum Feedback Capacitance (Crss):	9 pF
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	800 V
Additional Features:	AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	15 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
47,502	$2.280	$108,304.560

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