SIHD12N50E-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SIHD12N50E-GE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 114 W; Minimum Operating Temperature: -55 Cel; Package Body Material: PLASTIC/EPOXY;
Datasheet	SIHD12N50E-GE3 Datasheet
In Stock	6,012

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	58 ns
Maximum Drain Current (ID):	10.5 A
Maximum Pulsed Drain Current (IDM):	21 A
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	114 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	82 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.38 ohm
Avalanche Energy Rating (EAS):	103 mJ
Other Names:	SIHD12N50E-GE3CT SIHD12N50E-GE3TRINACTIVE SIHD12N50E-GE3DKR-ND SIHD12N50E-GE3DKRINACTIVE SIHD12N50E-GE3DKR SIHD12N50E-GE3TR-ND SIHD12N50E-GE3CT-ND SIHD12N50E-GE3TR
Maximum Feedback Capacitance (Crss):	6 pF
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	500 V
Additional Features:	AVALANCHE RATED
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
6,012	-	-

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