SIHG17N80AE-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SIHG17N80AE-GE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 179 W; No. of Elements: 1; Maximum Drain-Source On Resistance: .29 ohm;
Datasheet	SIHG17N80AE-GE3 Datasheet
In Stock	17,579

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	88 ns
Maximum Drain Current (ID):	15 A
Maximum Pulsed Drain Current (IDM):	32 A
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	179 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	152 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.29 ohm
Avalanche Energy Rating (EAS):	127 mJ
Maximum Feedback Capacitance (Crss):	5 pF
JEDEC-95 Code:	TO-247AC
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	800 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
17,579	$0.970	$17,051.630

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