Vishay Intertechnology - SIHP25N50E-BE3

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SIHP25N50E-BE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIHP25N50E-BE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Minimum DS Breakdown Voltage: 500 V; Maximum Feedback Capacitance (Crss): 8 pF;
Datasheet SIHP25N50E-BE3 Datasheet
In Stock3,736
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 110 ns
Maximum Drain Current (ID): 26 A
Maximum Pulsed Drain Current (IDM): 50 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 250 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 144 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .145 ohm
Avalanche Energy Rating (EAS): 273 mJ
Other Names: 742-SIHP25N50E-BE3TR-ND
742-SIHP25N50E-BE3DKR-ND
742-SIHP25N50E-BE3CT-ND
742-SIHP25N50E-BE3TR
742-SIHP25N50E-BE3DKRINACTIVE
742-SIHP25N50E-BE3
742-SIHP25N50E-BE3CTINACTIVE
742-SIHP25N50E-BE3CT
742-SIHP25N50E-BE3DKR
Maximum Feedback Capacitance (Crss): 8 pF
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 500 V
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