SIRA50DP-T1-RE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SIRA50DP-T1-RE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; No. of Elements: 1; Maximum Turn On Time (ton): 58 ns;
Datasheet	SIRA50DP-T1-RE3 Datasheet
In Stock	6,964

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	58 ns
Maximum Drain Current (ID):	100 A
Maximum Pulsed Drain Current (IDM):	400 A
Surface Mount:	YES
No. of Terminals:	5
Maximum Power Dissipation (Abs):	100 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	126 ns
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.001 ohm
Avalanche Energy Rating (EAS):	101 mJ
Other Names:	SIRA50DP-T1-RE3TR SIRA50DP-T1-RE3DKR SIRA50DP-T1-RE3CT
Maximum Feedback Capacitance (Crss):	110 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Maximum Drain Current (Abs) (ID):	100 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
6,964	-	-

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;