Vishay Intertechnology - SIS412DN-T1-GE3

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SIS412DN-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIS412DN-T1-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15.6 W; Case Connection: DRAIN; JESD-30 Code: S-XDSO-C5;
Datasheet SIS412DN-T1-GE3 Datasheet
In Stock20,995
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8.7 A
Maximum Pulsed Drain Current (IDM): 30 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Pure Matte Tin (Sn) - annealed
No. of Terminals: 5
Maximum Power Dissipation (Abs): 15.6 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-XDSO-C5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .024 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 1.25 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 12 A
Peak Reflow Temperature (C): 260
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