Vishay Intertechnology - SIS590DN-T1-GE3

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SIS590DN-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIS590DN-T1-GE3
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 17.9 W; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
Datasheet SIS590DN-T1-GE3 Datasheet
In Stock3,002
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 115 ns
Maximum Drain Current (ID): 4 A
Maximum Pulsed Drain Current (IDM): 8 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 17.9 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 70 ns
JESD-30 Code: S-PDSO-F6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .167 ohm
Other Names: 742-SIS590DN-T1-GE3TR
742-SIS590DN-T1-GE3DKR
742-SIS590DN-T1-GE3CT
Maximum Feedback Capacitance (Crss): 2 pF
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Peak Reflow Temperature (C): 260
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