SQ1464EEH-T1_GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQ1464EEH-T1_GE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .43 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: 1.41 ohm;
Datasheet	SQ1464EEH-T1_GE3 Datasheet
In Stock	5,490

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	15 pF
Maximum Drain Current (ID):	.44 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	6
Minimum DS Breakdown Voltage:	60 V
Maximum Power Dissipation (Abs):	.43 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Reference Standard:	AEC-Q101
Maximum Drain-Source On Resistance:	1.41 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
5,490	-	-

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